BS IEC 60747-14-5-2010 半导体器件.半导体传感器.PN-结点半导体温度传感器
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来源:标准资料网
【英文标准名称】:Semiconductordevices-Semiconductorsensors-PN-junctionsemiconductortemperaturesensor
【原文标准名称】:半导体器件.半导体传感器.PN-结点半导体温度传感器
【标准号】:BSIEC60747-14-5-2010
【标准状态】:现行
【国别】:英国
【发布日期】:2010-04-30
【实施或试行日期】:2010-04-30
【发布单位】:英国标准学会(GB-BSI)
【起草单位】:BSI
【标准类型】:()
【标准水平】:()
【中文主题词】:元部件;组件;定义;耐久性;尺寸选定;分立器件;电气工程;电子工程;电子设备及元件;检验;套圈;集成电路;布置;处理;惰性气体铠装电弧焊;作标记;测量;测量技术;光电子器件;性能;特性;评定;额定值;可靠性;可靠度;半导体器件;半导体;传感器;测头;规范(验收);符号;温度;试验;测试;痕量元素分析
【英文主题词】:Components;Definitions;Dimensioning;Discretedevices;Electricalengineering;Electronicengineering;Electronicequipmentandcomponents;Inspection;Integratedcircuits;Layout;Marking;Measurement;Measuringtechniques;Optoelectronicdevices;Properties;Ratings;Reliability;Semiconductordevices;Semiconductors;Sensors;Specification(approval);Symbols;Temperature;Testing
【摘要】:
【中国标准分类号】:L40
【国际标准分类号】:31_080_99
【页数】:22P;A4
【正文语种】:英语
【英文标准名称】:ULStandardforSafetyMarineShipboardCableCOMMENTSDUE6/22/2001(4p)
【原文标准名称】:海洋船用电缆UL安全性标准.评议提交截止日期期:2001年6月22日(4页)
【标准号】:UL1309BULLETINS-2001
【标准状态】:现行
【国别】:美国
【发布日期】:2001-01-01
【实施或试行日期】:
【发布单位】:美国保险商实验所(US-UL)
【起草单位】:UL
【标准类型】:()
【标准水平】:()
【中文主题词】:
【英文主题词】:
【摘要】:ThisStandardspecifiestherequirementsfordistribution(power),control,andsignalcablesforuseaboardcommercialshipsandmobileoffshoredrillingunits(MODU?S),rated8000Vmaximum,insingleormulticonductorconstruction,withorwithoutmetalarmour,andwithorwithoutanoveralljacket
【中国标准分类号】:K13
【国际标准分类号】:47_020_60
【页数】:4
【正文语种】:英语
【英文标准名称】:TestMethodforQuantifyingTungstenSilicideSemiconductorProcessFilmsforCompositionandThickness
【原文标准名称】:定量分析硅化钨半导体加工膜组分和厚度的标准试验方法
【标准号】:ASTMF1894-1998(2003)
【标准状态】:现行
【国别】:
【发布日期】:1998
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.17
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:定量分析;硅化钨分析;背散射分析;金属膜;组分
【英文主题词】:analysisoftungstensilicide;backscatteringanalysis;composition;metallizationfilms;quantitativeanalysis;RBS;Wsix
【摘要】:ThistestmethodcanbeusedtoensureabsolutereproducibilityofWSixfilmdepositionsystemsoverthecourseofmanymonths.Thetimespanofmeasurementsisessentiallythelifeofmanyprocessdepositionsystems.ThistestmethodcanbeusedtoqualifynewWSixdepositionsystemstoensureduplicabilityofexistingsystems.Thistestmethodisessentialforthecoordinationofglobalsemiconductorfabricationoperationsusingdifferentanalyticalservices.Thistestmethodallowssamplesfromvariousdepositionsystemstobeanalyzedatdifferentsitesandtimes.Thistestmethodisthechosencalibrationtechniqueforavarietyofanalyticaltechniques,including,butnotlimitedto:5.3.1Electronspectroscopyforchemicalanalysis(ESCAorXPS),5.3.2Augerelectronspectroscopy(AES),5.3.3Fouriertransforminfraredredspectroscopy(FTIR),5.3.4Secondaryionmassspectrometry(SIMS),and5.3.5Electrondispersivespectrometry(EDS)andparticleinducedx-rayemission(PIXE).1.1Thistestmethodcoversthequantitativedeterminationoftungstenandsiliconconcentrationsintungsten/silicon(WSIx),semiconductorprocessfilmsusingRutherfordBackscatteringSpectrometry(RBS).(1)ThistestmethodalsocoversthedetectionandquantificationofimpuritiesinthemassrangefromphosphorusA(31atomicmassunits(amu)toantimony(122amu).1.2Thistestmethodcanbeusedfortungstensilicidefilmspreparedbyanydepositionorannealingprocesses,orboth.Thefilmmustbeauniformfilmwithanarealcoveragegreaterthantheincidentionbeam(~2.5mm).1.3Thistestmethodaccuratelymeasureshefollowingfilmproperties:silicon/tungstenratioandvariationswithdepth,tungstendepthprofilethroughoutfilm,WSIx,filmthickness,argonconcentrations(ifpresent),presenceofoxideonsurfaceofWSIxfilms,andtransitionmetalimpuritiestodetectionlimitsof1x1014atoms/cm2.1.4Thistestmethodcandetectabsolutedifferencesinsiliconandtungstenconcentrationsof+/-3and+/-1atomicpercent,respectively,measuredfromdifferentsamplesinseparateanalyses.relativevariationsinthetungstenconcentrationindepthcanbedetectedto+/-0.2atomicpercentwithadepthresolutionof+/-70A.1.5ThistestmethodsupportsandassistsinqualifyingWSIxfilmsbyelectricalresistivitytechniques.1.6ThistestmethodcanbeperformedforWSIxfilmsdepositedonconductingorinsulatingsubstrates.1.7ThistestmethodisusefulforWSIxfilmsbetween20and400mmwithanarealcoverageofgreaterthan1by1mm.1.8Thistestmethodisnon-destructivetothefilmtotheextentofsputtering.1.9Astatisticalprocesscontrol(SPC)ofWSIxfilmshasbeenmonitoredsince1993withreproducibilityto+/-4%.1.10ThistestmethodproducesaccuratefilmthicknessesbymodelingthefilmdensityoftheWSIxfilmasWSI2(hexagonal)plusexcesselementalSI2.Themeasuredfilmthicknessisalowerlimittotheactualfilmthicknesswithanaccuracylessthan10%comparedtoSEMcross-sectionmeasurements(see13.4)1.11Thistestmethodcanbeusedtoanalyzefilmsonwholewafersupto300mmwithoutbreakingthewafers.Thesitesthatcanbeanalyzedmayberestrictedtoconcentricringsnearthewaferedgesfor200-mmand300-mmwafers,dependingonsystemcapabilities.1.12Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.ThereaderisreferencedtoSection8ofthistestmethod......
【中国标准分类号】:H82
【国际标准分类号】:29_045
【页数】:7P.;A4
【正文语种】:
